{"title":"一个完全集成的低功率e类功率放大器，用于短距离通信","authors":"Kerim Ture, Enver G. Kilinc, C. Dehollain","doi":"10.1109/MMS.2014.7089007","DOIUrl":null,"url":null,"abstract":"This paper presents the advantages and drawbacks of designing different power amplifier types. The study also compares the drain efficiencies of the current-source and switch-type power amplifiers. The appropriate power amplifier needs to be chosen for low-power short range data communication. A fully integrated low-power class-E power amplifier at 869 MHz for short range communication is designed. The power amplifier is integrated using a 0.18 μm CMOS technology. Post-layout simulation results show the effectiveness of the power amplifier. The power amplifier consumes only 487.2 μW at 0.2 V supply voltage. The drain efficiency of the power amplifier is 55% at -5.8 dBm output power for 50 Ω load.","PeriodicalId":166697,"journal":{"name":"Proceedings of 2014 Mediterranean Microwave Symposium (MMS2014)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A fully integrated low-power class-E power amplifier for short range communication\",\"authors\":\"Kerim Ture, Enver G. Kilinc, C. Dehollain\",\"doi\":\"10.1109/MMS.2014.7089007\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the advantages and drawbacks of designing different power amplifier types. The study also compares the drain efficiencies of the current-source and switch-type power amplifiers. The appropriate power amplifier needs to be chosen for low-power short range data communication. A fully integrated low-power class-E power amplifier at 869 MHz for short range communication is designed. The power amplifier is integrated using a 0.18 μm CMOS technology. Post-layout simulation results show the effectiveness of the power amplifier. The power amplifier consumes only 487.2 μW at 0.2 V supply voltage. The drain efficiency of the power amplifier is 55% at -5.8 dBm output power for 50 Ω load.\",\"PeriodicalId\":166697,\"journal\":{\"name\":\"Proceedings of 2014 Mediterranean Microwave Symposium (MMS2014)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 2014 Mediterranean Microwave Symposium (MMS2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MMS.2014.7089007\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 2014 Mediterranean Microwave Symposium (MMS2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MMS.2014.7089007","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A fully integrated low-power class-E power amplifier for short range communication
This paper presents the advantages and drawbacks of designing different power amplifier types. The study also compares the drain efficiencies of the current-source and switch-type power amplifiers. The appropriate power amplifier needs to be chosen for low-power short range data communication. A fully integrated low-power class-E power amplifier at 869 MHz for short range communication is designed. The power amplifier is integrated using a 0.18 μm CMOS technology. Post-layout simulation results show the effectiveness of the power amplifier. The power amplifier consumes only 487.2 μW at 0.2 V supply voltage. The drain efficiency of the power amplifier is 55% at -5.8 dBm output power for 50 Ω load.
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