钴掺杂对钛酸钡深、浅阱光折变特性的影响

M. H. Garrett, J. Chang, P. Tayebati, H. Jenssen, C. Warde
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引用次数: 1

摘要

最近Rytz等人报道了钴掺杂钛酸钡的光折变特性。其中报道了远光束耦合增益。同样,我们已经培养了一系列钴掺杂的p型钛酸钡晶体(未掺杂,17 ppm, 50 ppm和75 ppm),也具有相对较大的光束耦合增益,例如,对于E||a和kg||c,在75 ppm样品的514.5 nm处增益为7.4 cm−1。我们通过确定响应时间对强度的亚线性依赖性,±c轴晶体取向的光束耦合增益的不对称性(即电光和吸收耦合),增益的强度依赖性和光诱导的暗衰减进一步表征了这些晶体。实验结果表明,随着钴浓度的增加,晶体的光折变特性由Mahgerefteh和Feinberg[2]定义的“B型”变为“A型”。A型晶体填充了空穴浅阱,B型晶体部分填充了空穴浅阱,因此暗电导率分别较低和较高。
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The Influence of Cobalt Doping on Deep and Shallow Trap Dependent Photorefractive Properties of Barium Titanate
The photorefractive properties of cobalt­doping barium titanate have been recently reported by Rytz et al. [1]. High beam coupling gains were reported therein. Similarly, we have grown a series of cobalt-doped p-type barium titanate crystals, (undoped, 17 ppm, 50 ppm and 75 ppm), that also have relatively large beam coupling gains, e.g. for E||a and kg||c the gain is 7.4 cm−1 at 514.5 nm in the 75 ppm sample. We have further characterized these crystals by determining the sublinear dependence of the response time on intensity, the asymmetry of the beam coupling gain for ±C-axis crystal orientations, (i.e. electrooptic and absorptive coupling), intensity dependence of the gain, and light-induced dark decays. Experimental results indicate that, as the cobalt concentration is increased, the photorefractive character of the crystals change from "type B" to "type A" as defined by Mahgerefteh and Feinberg [2]. Type A crystals have filled hole-shallow traps and type B crystals have partially filled hole-shallow traps and thus low and high dark conductivity respectively.
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