{"title":"用于软开关应用的GTOs特性","authors":"G. Skibinski, D. Divan","doi":"10.1109/IAS.1988.25130","DOIUrl":null,"url":null,"abstract":"An examination is made of modifications possible in GTO (gate-turn-off) specifications as a result of application in soft switching topologies. Turn-off is characterized as a function of (dv/dt, di/dt) controlled by the external resonant elements and gate drive circuits. Turn-on is characterized for low-voltage switching and external gate drive circuit influence. Device interaction with the various operating modes of the soft switching topologies is examined.<<ETX>>","PeriodicalId":274766,"journal":{"name":"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"34","resultStr":"{\"title\":\"Characterization of GTOs for soft switching applications\",\"authors\":\"G. Skibinski, D. Divan\",\"doi\":\"10.1109/IAS.1988.25130\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An examination is made of modifications possible in GTO (gate-turn-off) specifications as a result of application in soft switching topologies. Turn-off is characterized as a function of (dv/dt, di/dt) controlled by the external resonant elements and gate drive circuits. Turn-on is characterized for low-voltage switching and external gate drive circuit influence. Device interaction with the various operating modes of the soft switching topologies is examined.<<ETX>>\",\"PeriodicalId\":274766,\"journal\":{\"name\":\"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"34\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IAS.1988.25130\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.1988.25130","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of GTOs for soft switching applications
An examination is made of modifications possible in GTO (gate-turn-off) specifications as a result of application in soft switching topologies. Turn-off is characterized as a function of (dv/dt, di/dt) controlled by the external resonant elements and gate drive circuits. Turn-on is characterized for low-voltage switching and external gate drive circuit influence. Device interaction with the various operating modes of the soft switching topologies is examined.<>