H. Momose, S. Yoshitomi, K. Kojima, T. Ohguro, Y. Toyoshima, H. Ishiuchi
{"title":"稍微倾斜离轴通道(110)的N-和p - mosfet的电特性","authors":"H. Momose, S. Yoshitomi, K. Kojima, T. Ohguro, Y. Toyoshima, H. Ishiuchi","doi":"10.1109/MIXDES.2007.4286124","DOIUrl":null,"url":null,"abstract":"Si surface properties and electrical characteristics in n- and p-MOSFETs with 2-6 degree tilted off-axis (110) channel were investigated for the first time. The transconductance of p-MOSFET with off-axis channel was significantly degraded than that of normal channel on (110) plane, whereas that of n-MOSFET was slightly improved than that of normal channel. The changes were larger than those observed in slightly off-axis (100) samples. It was also found that the gate leakage current and 1/f noise in (110) samples were sensitive to off-axis angle.","PeriodicalId":310187,"journal":{"name":"2007 14th International Conference on Mixed Design of Integrated Circuits and Systems","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Electrical Characteristics in N- and P-MOSFETS with Slightly Tilted Off-Axis (110) Channel\",\"authors\":\"H. Momose, S. Yoshitomi, K. Kojima, T. Ohguro, Y. Toyoshima, H. Ishiuchi\",\"doi\":\"10.1109/MIXDES.2007.4286124\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Si surface properties and electrical characteristics in n- and p-MOSFETs with 2-6 degree tilted off-axis (110) channel were investigated for the first time. The transconductance of p-MOSFET with off-axis channel was significantly degraded than that of normal channel on (110) plane, whereas that of n-MOSFET was slightly improved than that of normal channel. The changes were larger than those observed in slightly off-axis (100) samples. It was also found that the gate leakage current and 1/f noise in (110) samples were sensitive to off-axis angle.\",\"PeriodicalId\":310187,\"journal\":{\"name\":\"2007 14th International Conference on Mixed Design of Integrated Circuits and Systems\",\"volume\":\"96 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 14th International Conference on Mixed Design of Integrated Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIXDES.2007.4286124\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 14th International Conference on Mixed Design of Integrated Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIXDES.2007.4286124","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical Characteristics in N- and P-MOSFETS with Slightly Tilted Off-Axis (110) Channel
Si surface properties and electrical characteristics in n- and p-MOSFETs with 2-6 degree tilted off-axis (110) channel were investigated for the first time. The transconductance of p-MOSFET with off-axis channel was significantly degraded than that of normal channel on (110) plane, whereas that of n-MOSFET was slightly improved than that of normal channel. The changes were larger than those observed in slightly off-axis (100) samples. It was also found that the gate leakage current and 1/f noise in (110) samples were sensitive to off-axis angle.
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