利用太赫兹时域光谱研究光激发无机和有机半导体的瞬态特性

2006 International Topical Meeting on Microwave Photonics Pub Date : 2006-10-01 DOI:10.1109/MWP.2006.346501

Yi-Hsing Peng, W. Cao, V. Yun, W. Herman, C.H. Lee

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摘要

利用400 nm光泵浦和太赫兹探针，用太赫兹时域光谱法测量了光激发半导体(p型硅)和半导体聚合物(MEH-PPV/PCBM)的瞬态光学和电子特性。采用简单的德鲁德模型拟合半导体数据。半导体聚合物的载流子上升时间和衰减时间都非常快

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Transient Properties of Photoexcited Inorganic and Organic Semiconductors using Terahertz Time Domain Spectroscopy

Transient optical and electronic properties of photoexcited, semiconductor (p-type silicon) and semiconducting polymer (MEH-PPV/PCBM) are measured by terahertz time-domain spectroscopy using a 400 nm optical pump and terahertz probe. The semiconductor data is fit using a simple Drude model. The semiconducting polymer data shows very fast carrier rise time and decay time

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2006 International Topical Meeting on Microwave Photonics

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