ALD al掺杂ZnO薄膜作为半导体和压电材料:工艺合成

{"title":"ALD al掺杂ZnO薄膜作为半导体和压电材料:工艺合成","authors":"A. Rezk, I. Saadat","doi":"10.1007/978-3-319-93100-5_3","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":126783,"journal":{"name":"The IoT Physical Layer","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"ALD Al-doped ZnO Thin Film as Semiconductor and Piezoelectric Material: Process Synthesis\",\"authors\":\"A. Rezk, I. Saadat\",\"doi\":\"10.1007/978-3-319-93100-5_3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":126783,\"journal\":{\"name\":\"The IoT Physical Layer\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The IoT Physical Layer\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1007/978-3-319-93100-5_3\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The IoT Physical Layer","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1007/978-3-319-93100-5_3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}