{"title":"磁光记录用掺cu Bi, Ga:DyIG和Bi, Al: DyIG薄膜矫顽力和补偿温度的研究","authors":"Yongzong Zhou, D. Shen, F. Gan","doi":"10.1117/12.150677","DOIUrl":null,"url":null,"abstract":"Cu-doped Bi, Ga:DyIG and Bi, Al:DyIG films on glass substrates have been prepared by pyrolysis method, and the coercive force (Hc) and the compensation temperature (Tcomp) were investigated. For Cu-doped Bi, Ga:DyIG and Bi, Al:DyIG films, high Hc values of 13 kOe and 7 kOe were obtained, respectively. The extremely high Hc values were attributed to Cu entering the lattice sites.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Study of coercive force and compensation temperature in Cu-doped Bi, Ga:DyIG, and Bi, Al:DyIg films for magneto-optical recording\",\"authors\":\"Yongzong Zhou, D. Shen, F. Gan\",\"doi\":\"10.1117/12.150677\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Cu-doped Bi, Ga:DyIG and Bi, Al:DyIG films on glass substrates have been prepared by pyrolysis method, and the coercive force (Hc) and the compensation temperature (Tcomp) were investigated. For Cu-doped Bi, Ga:DyIG and Bi, Al:DyIG films, high Hc values of 13 kOe and 7 kOe were obtained, respectively. The extremely high Hc values were attributed to Cu entering the lattice sites.\",\"PeriodicalId\":212484,\"journal\":{\"name\":\"Optical Storage and Information Data Storage\",\"volume\":\"102 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-08-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical Storage and Information Data Storage\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.150677\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Storage and Information Data Storage","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.150677","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of coercive force and compensation temperature in Cu-doped Bi, Ga:DyIG, and Bi, Al:DyIg films for magneto-optical recording
Cu-doped Bi, Ga:DyIG and Bi, Al:DyIG films on glass substrates have been prepared by pyrolysis method, and the coercive force (Hc) and the compensation temperature (Tcomp) were investigated. For Cu-doped Bi, Ga:DyIG and Bi, Al:DyIG films, high Hc values of 13 kOe and 7 kOe were obtained, respectively. The extremely high Hc values were attributed to Cu entering the lattice sites.
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