石墨烯纳米带互连射频性能分析

Subhajit Das, S. Bhattacharya, Debaprasad Das, H. Rahaman
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引用次数: 6

摘要

本文分析了石墨烯纳米带(GNR)作为16nm技术节点的射频VLSI电路的纳米互连。通过计算基于互连几何的电路参数,建立了频率相关的电等效模型。利用所建立的模型对GNR互连的射频性能进行了研究,并与铜基互连在16nm技术节点上的射频性能进行了比较。结果表明,在1000thz及1000thz以上的频率范围内,GNR互连具有较好的工作性能,且互连长度较短。
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RF performance analysis of graphene nanoribbon interconnect
The work in this paper presents analysis of graphene nanoribbon (GNR) as nano-interconnect for radio-frequency (RF) VLSI circuits for 16 nm technology node. A frequency dependent electrical equivalent model is developed by calculating the circuit parameters based on interconnect geometry. Using the developed model the RF performance of GNR based interconnects is investigated and compared to that of copper based interconnects for 16 nm technology node. It is shown that GNR based interconnect shows better performance for operating in and beyond 1000 THz frequency range for shorter interconnect length.
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