用于高光谱和空间分辨率x射线星载望远镜的高阻抗铌硅(NbSi)过渡边缘传感器(TES)的优化和实验测量

Benjamin Criton, J. Sauvageot, X. de la Broïse, S. Marnieros, C. Oriol, L. Bergé
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引用次数: 0

摘要

对超新星残骸、星系团、x射线双星和黑洞的星载x射线观测是确定宇宙结构的关键因素。天文学家需要宽视场、高空间分辨率和非常高的光谱分辨率,才能非常准确地确定物理条件(温度、元素丰度)。今天的技术(主要是TESs)获得非常高的光谱分辨率,但不利于功耗,主要是由于它们的冷级SQUID读出电子设备。它们的高功耗限制了卫星低温恒温器在50 mK焦平面上可承受的像素总数,从而限制了仪器的视场(FoV)。我们使用了一种新的合金技术:高电阻率NbSi,使我们能够设计出具有高光谱分辨率和超低功耗(低于10 pW)的TES传感器。它们的高阻抗允许在低温恒温器的较热阶段使用晶体管读出。这与传感器固有的超低功耗相结合,大大提高了探测器的像素数量。在本文中,我们探索了基于我们的电热模型的像素优化方法,以达到1.8 eV数量级的光谱分辨率。然后,我们使用这个模型来制造一批新的像素,并对其进行实验测量。我们使用铁55源和创新的片上脉冲注入系统测量像素的瞬态响应、能量线性和噪声谱。设计了一个低噪声低温放大器和低温实验装置来进行这些测量。
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Optimization and experimental measurements of high impedance niobium-silicon (NbSi) transition edge sensors (TES) for high spectral and spatial resolution x-ray space-borne telescopes
Space-borne x-ray observations of supernova remnants, galactic clusters, x-ray binaries, and black holes are key elements in determining the structure of the universe. Astronomers require wide field of view with high spatial resolution but also very high spectral resolution to determine the physical conditions (temperatures, element abundances) with great accuracy. Today’s technologies (mostly TESs) obtain very high spectral resolutions to the detriment of power consumption, mostly due to their cold stage SQUID readout electronics. Their high power consumption limits the instrument’s field of view (FoV) by constraining the total number of pixels affordable at the 50 mK focal plane of a satellite cryostat. We use a new alloy technology: the high resistivity NbSi, enabling us to design TES sensors promising high spectral resolution and ultra low power consumption (below 10 pW). Their high impedance allows the use of a transistor readout at a hotter stage of the cryostat. This, in conjunction with the inherent ultra-low power dissipation of the sensors, raises drastically the number of pixels of the detector. In this article, we explore pixel optimization ways based on our electro-thermal model to reach spectral resolution of the order of 1.8 eV. We then use this model to manufacture a new batch of pixels on which we conduct experimental measurements. We measure the transient response, energy linearity and noise spectrum of our pixels with an Iron 55 source as well as an innovative on-chip pulse injection system. A low noise cryogenic amplifier as well as a cryogenic experimental setup have been designed to perform these measurements.
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