Kalai Priya V, Avinash Kumar, B. Muthuraj, S. Joshi, Bhushan Kumar, Nikhil Garg, A. Prasad
{"title":"双面Pert太阳能电池的浮结分析","authors":"Kalai Priya V, Avinash Kumar, B. Muthuraj, S. Joshi, Bhushan Kumar, Nikhil Garg, A. Prasad","doi":"10.1109/ICAAIC56838.2023.10140361","DOIUrl":null,"url":null,"abstract":"In the bifacial PERT base p solar cells (SCs) with floating junction in the boron backscatter field, it was found that the efficiency decreased with the increase of the sheet resistance of the boron BSF, when the devices were illuminated on the emitter. It was also found that the formation of the floating junction did not improve the SCs. The form factor was practically unaffected by the floating junction, however the S-C current density and the O-C voltage decreased. By analyzing the external quantum efficiency, it was found that the floating junction did not affect the passivation of the surface with the BSF, regardless of doping.","PeriodicalId":267906,"journal":{"name":"2023 2nd International Conference on Applied Artificial Intelligence and Computing (ICAAIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Floating Junction Analysis in Bifacial Pert Solar Cells\",\"authors\":\"Kalai Priya V, Avinash Kumar, B. Muthuraj, S. Joshi, Bhushan Kumar, Nikhil Garg, A. Prasad\",\"doi\":\"10.1109/ICAAIC56838.2023.10140361\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the bifacial PERT base p solar cells (SCs) with floating junction in the boron backscatter field, it was found that the efficiency decreased with the increase of the sheet resistance of the boron BSF, when the devices were illuminated on the emitter. It was also found that the formation of the floating junction did not improve the SCs. The form factor was practically unaffected by the floating junction, however the S-C current density and the O-C voltage decreased. By analyzing the external quantum efficiency, it was found that the floating junction did not affect the passivation of the surface with the BSF, regardless of doping.\",\"PeriodicalId\":267906,\"journal\":{\"name\":\"2023 2nd International Conference on Applied Artificial Intelligence and Computing (ICAAIC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 2nd International Conference on Applied Artificial Intelligence and Computing (ICAAIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICAAIC56838.2023.10140361\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 2nd International Conference on Applied Artificial Intelligence and Computing (ICAAIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAAIC56838.2023.10140361","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Floating Junction Analysis in Bifacial Pert Solar Cells
In the bifacial PERT base p solar cells (SCs) with floating junction in the boron backscatter field, it was found that the efficiency decreased with the increase of the sheet resistance of the boron BSF, when the devices were illuminated on the emitter. It was also found that the formation of the floating junction did not improve the SCs. The form factor was practically unaffected by the floating junction, however the S-C current density and the O-C voltage decreased. By analyzing the external quantum efficiency, it was found that the floating junction did not affect the passivation of the surface with the BSF, regardless of doping.