{"title":"InGaAs/InP APD中大暗电流增加的来源及优化","authors":"J. Wen, W. J. Wang, W. D. Hu, N. Li, Z. Li, W. Lu","doi":"10.1109/NUSOD.2016.7547062","DOIUrl":null,"url":null,"abstract":"Dark current of our InGaAs/InP planar SAGCM APD is simulated. Activation energy Ea obtained from the I-V test under temperature range of 240K~300K is cooperated in the simulation. Two origins of the dark current increasi of over one order of magnitude from the punchthrouth voltage to the breakthrough voltage are analyzed. Our results provide two critical points to reduce the dark current of an InGaAs/InP APD operated under the linear operation mode.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Origin and optimization of large dark current increase in InGaAs/InP APD\",\"authors\":\"J. Wen, W. J. Wang, W. D. Hu, N. Li, Z. Li, W. Lu\",\"doi\":\"10.1109/NUSOD.2016.7547062\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dark current of our InGaAs/InP planar SAGCM APD is simulated. Activation energy Ea obtained from the I-V test under temperature range of 240K~300K is cooperated in the simulation. Two origins of the dark current increasi of over one order of magnitude from the punchthrouth voltage to the breakthrough voltage are analyzed. Our results provide two critical points to reduce the dark current of an InGaAs/InP APD operated under the linear operation mode.\",\"PeriodicalId\":425705,\"journal\":{\"name\":\"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2016.7547062\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2016.7547062","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Origin and optimization of large dark current increase in InGaAs/InP APD
Dark current of our InGaAs/InP planar SAGCM APD is simulated. Activation energy Ea obtained from the I-V test under temperature range of 240K~300K is cooperated in the simulation. Two origins of the dark current increasi of over one order of magnitude from the punchthrouth voltage to the breakthrough voltage are analyzed. Our results provide two critical points to reduce the dark current of an InGaAs/InP APD operated under the linear operation mode.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
