V. Šály, M. Perný, J. Packa, F. Janiček, M. Váry, M. Mikolasek, J. Huran
{"title":"光伏应用中a-SiC/c-Si异质结的交直流响应","authors":"V. Šály, M. Perný, J. Packa, F. Janiček, M. Váry, M. Mikolasek, J. Huran","doi":"10.1109/EPE.2017.7967267","DOIUrl":null,"url":null,"abstract":"Interest in amorphous silicon and carbon alloys is always actual mainly due to their particular advantages in comparison to conventional crystalline materials. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell. DC and AC measurement and subsequent evaluation were carried out in order to comprehensively assess the electrical transport processes in the prepared structures.","PeriodicalId":201464,"journal":{"name":"2017 18th International Scientific Conference on Electric Power Engineering (EPE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"AC and DC response of heterojunction a-SiC/c-Si for PV application\",\"authors\":\"V. Šály, M. Perný, J. Packa, F. Janiček, M. Váry, M. Mikolasek, J. Huran\",\"doi\":\"10.1109/EPE.2017.7967267\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Interest in amorphous silicon and carbon alloys is always actual mainly due to their particular advantages in comparison to conventional crystalline materials. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell. DC and AC measurement and subsequent evaluation were carried out in order to comprehensively assess the electrical transport processes in the prepared structures.\",\"PeriodicalId\":201464,\"journal\":{\"name\":\"2017 18th International Scientific Conference on Electric Power Engineering (EPE)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 18th International Scientific Conference on Electric Power Engineering (EPE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPE.2017.7967267\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 18th International Scientific Conference on Electric Power Engineering (EPE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPE.2017.7967267","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
AC and DC response of heterojunction a-SiC/c-Si for PV application
Interest in amorphous silicon and carbon alloys is always actual mainly due to their particular advantages in comparison to conventional crystalline materials. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell. DC and AC measurement and subsequent evaluation were carried out in order to comprehensively assess the electrical transport processes in the prepared structures.