M. Boughariou, M. Fakhfakh, M. Ben Amor, M. Loulou, Y. Cooren, P. Siarry
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引用次数: 6
摘要
本文提出了一种采用0.35 μ m CMOS技术优化设计UMTS标准低噪声放大器的方法。在2.14 GHz时,LNA的电压增益为14.63 dB,噪声系数为0.63 dB, 1 dB压缩点为0.12 dBm。
Optimizing a low noise amplifier for UMTS standard through a heuristic
This paper presents an approach of optimization to design and to size a low noise amplifier for the UMTS standard, using 0.35 mum CMOS technology. At 2.14 GHz, the LNA exhibits a voltage gain of 14.63 dB, a noise figure of 0.63 dB, and a 1 dB compression point of 0.12 dBm.