V. Avilov, Z. Vakulov, Aleksandr Fedotov, R. Tominov, N. Polupanov, V. Smirnov
{"title":"用于机器人和人工智能系统的免成形氧化钛神经形态横杆阵列","authors":"V. Avilov, Z. Vakulov, Aleksandr Fedotov, R. Tominov, N. Polupanov, V. Smirnov","doi":"10.1109/DCNA56428.2022.9923309","DOIUrl":null,"url":null,"abstract":"The article shows the fabrication and study of 4×4 neuromorphic crossbar array Ti/TiO2/Cu. Memristors demonstrated resistive switching without any additional forming operations. The crossbar array exhibits multilevel switching at different Uset = 1.0 V, 1.5 V, and 2.0 V. The results obtained can be used in the fabrication of a forming-free titanium oxide neuromorphic crossbar array for robotics and artificial intelligence systems.","PeriodicalId":110836,"journal":{"name":"2022 6th Scientific School Dynamics of Complex Networks and their Applications (DCNA)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Forming-free titanium oxide neuromorphic crossbar array for robotics and AI systems\",\"authors\":\"V. Avilov, Z. Vakulov, Aleksandr Fedotov, R. Tominov, N. Polupanov, V. Smirnov\",\"doi\":\"10.1109/DCNA56428.2022.9923309\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The article shows the fabrication and study of 4×4 neuromorphic crossbar array Ti/TiO2/Cu. Memristors demonstrated resistive switching without any additional forming operations. The crossbar array exhibits multilevel switching at different Uset = 1.0 V, 1.5 V, and 2.0 V. The results obtained can be used in the fabrication of a forming-free titanium oxide neuromorphic crossbar array for robotics and artificial intelligence systems.\",\"PeriodicalId\":110836,\"journal\":{\"name\":\"2022 6th Scientific School Dynamics of Complex Networks and their Applications (DCNA)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-09-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 6th Scientific School Dynamics of Complex Networks and their Applications (DCNA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DCNA56428.2022.9923309\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 6th Scientific School Dynamics of Complex Networks and their Applications (DCNA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DCNA56428.2022.9923309","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Forming-free titanium oxide neuromorphic crossbar array for robotics and AI systems
The article shows the fabrication and study of 4×4 neuromorphic crossbar array Ti/TiO2/Cu. Memristors demonstrated resistive switching without any additional forming operations. The crossbar array exhibits multilevel switching at different Uset = 1.0 V, 1.5 V, and 2.0 V. The results obtained can be used in the fabrication of a forming-free titanium oxide neuromorphic crossbar array for robotics and artificial intelligence systems.
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