{"title":"硅LDMOS器件非线性输出电容的谐波发电","authors":"R. Gaddi, J. Plá, P. Tasker","doi":"10.1109/HFPSC.2001.962148","DOIUrl":null,"url":null,"abstract":"Compression and harmonic generation mechanisms coupled to the non-linear output drift-region capacitance of Silicon LDMOS FET transistors are thoroughly investigated. Large-signal time-domain analysis is performed on the device operated as a class AB amplifier. Observations confirm significant real power being shifted from the fundamental to the even order harmonics by the capacitive element acting effectively as a varactor diode multiplier.","PeriodicalId":129428,"journal":{"name":"6th IEEE High Frequency Postgraduate Colloquium (Cat. No.01TH8574)","volume":"345 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Harmonic power generation from the non-linear output capacitance of silicon LDMOS devices\",\"authors\":\"R. Gaddi, J. Plá, P. Tasker\",\"doi\":\"10.1109/HFPSC.2001.962148\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Compression and harmonic generation mechanisms coupled to the non-linear output drift-region capacitance of Silicon LDMOS FET transistors are thoroughly investigated. Large-signal time-domain analysis is performed on the device operated as a class AB amplifier. Observations confirm significant real power being shifted from the fundamental to the even order harmonics by the capacitive element acting effectively as a varactor diode multiplier.\",\"PeriodicalId\":129428,\"journal\":{\"name\":\"6th IEEE High Frequency Postgraduate Colloquium (Cat. No.01TH8574)\",\"volume\":\"345 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"6th IEEE High Frequency Postgraduate Colloquium (Cat. No.01TH8574)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HFPSC.2001.962148\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"6th IEEE High Frequency Postgraduate Colloquium (Cat. No.01TH8574)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HFPSC.2001.962148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Harmonic power generation from the non-linear output capacitance of silicon LDMOS devices
Compression and harmonic generation mechanisms coupled to the non-linear output drift-region capacitance of Silicon LDMOS FET transistors are thoroughly investigated. Large-signal time-domain analysis is performed on the device operated as a class AB amplifier. Observations confirm significant real power being shifted from the fundamental to the even order harmonics by the capacitive element acting effectively as a varactor diode multiplier.
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