低功耗和高速应用中基于CNTFET的神经元结构的SPICE建模

N. Mathan, S. Jayashri
{"title":"低功耗和高速应用中基于CNTFET的神经元结构的SPICE建模","authors":"N. Mathan, S. Jayashri","doi":"10.1109/ICCCT2.2019.8824863","DOIUrl":null,"url":null,"abstract":"Very Large-Scale Integration (VLSI) rapidly grew when the Transistor-Transistor Logic (TTL) has much higher power consumption than the Metal-Oxide Semiconductor (MOS) family. The development in the field of electronics have been tremendous since the advent of VLSI. Due to the disadvantages like tunnelling, scaling in Metal Oxide Semiconductor Field Effect Transistors, Carbon nanotubes can be considered as the promising candidate for future devices. Carbon nanotubes are considered as the next generation Field Effect Transistors that can sustain the scalability while increasing its performance. The artificial neural networks are depicted as a structure of interconnected neurons that can figure out values from inputs and are capable of pattern recognition as well as machine learning. The prime aim of this paper is to assimilate techniques that reduce the architecture size using CNTFET technology and decrease the power consumption which leads to higher efficiency and augmented performance of the device. To satisfy the pre-requisites the circuit is designed using 32nm CNTFET technology. The proposed neuron architecture concentrates on the modification of flip flop by replacing the transmission gates with pass transistor by restructuring and reorganisation method to achieve significant delay, power and power delay product utilization. Circuit level simulation for D Flip Flop and neuron Architecture has been performed. The simulation results show that the performance of neuron architecture is improved power by 24.02% with the use of CNTFET, which means the stability is vital than that of MOSFET.","PeriodicalId":445544,"journal":{"name":"2019 3rd International Conference on Computing and Communications Technologies (ICCCT)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"SPICE Modelling of CNTFET based Neuron Architecture for Low Power and High Speed applications\",\"authors\":\"N. Mathan, S. Jayashri\",\"doi\":\"10.1109/ICCCT2.2019.8824863\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Very Large-Scale Integration (VLSI) rapidly grew when the Transistor-Transistor Logic (TTL) has much higher power consumption than the Metal-Oxide Semiconductor (MOS) family. The development in the field of electronics have been tremendous since the advent of VLSI. Due to the disadvantages like tunnelling, scaling in Metal Oxide Semiconductor Field Effect Transistors, Carbon nanotubes can be considered as the promising candidate for future devices. Carbon nanotubes are considered as the next generation Field Effect Transistors that can sustain the scalability while increasing its performance. The artificial neural networks are depicted as a structure of interconnected neurons that can figure out values from inputs and are capable of pattern recognition as well as machine learning. The prime aim of this paper is to assimilate techniques that reduce the architecture size using CNTFET technology and decrease the power consumption which leads to higher efficiency and augmented performance of the device. To satisfy the pre-requisites the circuit is designed using 32nm CNTFET technology. The proposed neuron architecture concentrates on the modification of flip flop by replacing the transmission gates with pass transistor by restructuring and reorganisation method to achieve significant delay, power and power delay product utilization. Circuit level simulation for D Flip Flop and neuron Architecture has been performed. The simulation results show that the performance of neuron architecture is improved power by 24.02% with the use of CNTFET, which means the stability is vital than that of MOSFET.\",\"PeriodicalId\":445544,\"journal\":{\"name\":\"2019 3rd International Conference on Computing and Communications Technologies (ICCCT)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 3rd International Conference on Computing and Communications Technologies (ICCCT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCCT2.2019.8824863\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 3rd International Conference on Computing and Communications Technologies (ICCCT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCCT2.2019.8824863","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

当晶体管-晶体管逻辑(TTL)具有比金属氧化物半导体(MOS)家族高得多的功耗时,超大规模集成电路(VLSI)迅速发展。自超大规模集成电路问世以来,电子领域取得了巨大的发展。由于金属氧化物半导体场效应晶体管存在穿隧、结垢等缺点,碳纳米管被认为是未来器件中很有前途的候选材料。碳纳米管被认为是能够在保持可扩展性的同时提高其性能的新一代场效应晶体管。人工神经网络被描述为一个相互连接的神经元结构,可以从输入中计算出值,并且能够进行模式识别和机器学习。本文的主要目的是吸收使用CNTFET技术减少架构尺寸和降低功耗的技术,从而提高设备的效率和增强性能。为了满足这些先决条件,电路采用32nm CNTFET技术设计。所提出的神经元结构侧重于对触发器的改进,通过重构和重组的方法将传输门替换为通晶体管,以实现显著的延迟、功率和功率延迟产品利用率。对D触发器和神经元结构进行了电路级仿真。仿真结果表明,与MOSFET相比,cnfet的神经元结构性能提高了24.02%,这意味着其稳定性至关重要。
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SPICE Modelling of CNTFET based Neuron Architecture for Low Power and High Speed applications
Very Large-Scale Integration (VLSI) rapidly grew when the Transistor-Transistor Logic (TTL) has much higher power consumption than the Metal-Oxide Semiconductor (MOS) family. The development in the field of electronics have been tremendous since the advent of VLSI. Due to the disadvantages like tunnelling, scaling in Metal Oxide Semiconductor Field Effect Transistors, Carbon nanotubes can be considered as the promising candidate for future devices. Carbon nanotubes are considered as the next generation Field Effect Transistors that can sustain the scalability while increasing its performance. The artificial neural networks are depicted as a structure of interconnected neurons that can figure out values from inputs and are capable of pattern recognition as well as machine learning. The prime aim of this paper is to assimilate techniques that reduce the architecture size using CNTFET technology and decrease the power consumption which leads to higher efficiency and augmented performance of the device. To satisfy the pre-requisites the circuit is designed using 32nm CNTFET technology. The proposed neuron architecture concentrates on the modification of flip flop by replacing the transmission gates with pass transistor by restructuring and reorganisation method to achieve significant delay, power and power delay product utilization. Circuit level simulation for D Flip Flop and neuron Architecture has been performed. The simulation results show that the performance of neuron architecture is improved power by 24.02% with the use of CNTFET, which means the stability is vital than that of MOSFET.
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