人体金属模型表征的新方法

2015 Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC) Pub Date : 2015-05-26 DOI:10.1109/APEMC.2015.7175272

Sirui Luo, J. Salcedo, J. Hajjar, Y. Zhou, J. Liou

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引用次数: 0

摘要

提出并发展了一种表征由人体金属模型(HMM)应力引起的产品级故障的新方法。该表征框架优于传统的基于泄漏电流的方法，并且可以对集成电路(ic) HMM鲁棒性进行早期晶圆级评估。新方法在两个放大器上进行了验证，并与传统的泄漏电流方法和行业标准系统级IEC枪测试进行了基准测试。

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A new methodology for human metal model characterization

A new methodology for characterizing product-level failures due to the human metal model (HMM) stress is proposed and developed. This characterization framework is superior to the conventional leakage current-based approach, and it enables early wafer-level assessment of integrated circuits (ICs) HMM robustness. The new method is demonstrated in two amplifiers and is benchmarked versus the conventional leakage current method and the industry standard system-level IEC gun testing.

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来源期刊

2015 Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC)

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