Switching transient analysis and characterization of GaN HEMT

High electron mobility transistor (HEMT) has the advantage of fast switching capability, low power loss and small package design. Gallium Nitride (GaN) HEMT is widely researched in recent years. Accurate characterization and detailed switching analysis are critical for the practical application in power converters. In this paper, a 650V GaN HEMT is tested based on the double pulse tester. Based on the experimental results, the switching transient analysis is given and the phenomenon of Miller plateau shifting is explained. Switching time and switching loss characterization are given as the reference value for converter design.