考虑工艺变化的双v值和尺寸泄漏功率统计优化

A. Srivastava, D. Sylvester, D. Blaauw
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引用次数: 142

摘要

在100nm以下的CMOS设计中,不断增加的工艺可变性水平已经成为性能和功率限制设计的关键问题。在本文中,我们提出了一种新的统计意识的双vt和尺寸优化,它同时考虑了性能的可变性和设计的泄漏。虽然过去在统计分析方法上进行了大量的工作,但电路优化仍然主要使用确定性方法进行。我们在本文中表明,在具有显著可变性的设计中,确定性优化在严格的性能和泄漏约束下迅速失去有效性。然后,我们提出了一种统计感知的双vt和分级算法,其中延迟约束和灵敏度计算都以统计方式进行。我们证明,使用这种统计感知优化,与传统的确定性分析相比,泄漏功率可以降低15-35%。严格的延迟约束使得统计优化对高性能设计尤为重要。
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Statistical optimization of leakage power considering process variations using dual-Vth and sizing
Increasing levels of process variability in sub-100nm CMOS design has become a critical concern for performance and power constraint designs. In this paper, we propose a new statistically aware Dual-Vt and sizing optimization that considers both the variability in performance and leakage of a design. While extensive work has been performed in the past on statistical analysis methods, circuit optimization is still largely performed using deterministic methods. We show in this paper that deterministic optimization quickly looses effectiveness for stringent performance and leakage constraints in designs with significant variability. We then propose a statistically aware dual-Vt and sizing algorithm where both delay constraints and sensitivity computations are performed in a statistical manner. We demonstrate that using this statistically aware optimization, leakage power can be reduced by 15-35% compared to traditional deterministic analysis. The improvements increase for strict delay constraints making statistical optimization especially important for high performance designs.
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