Michael Case, Sigfried Knorr, Lawrence Larson, Dave Rensch, David Harame, Bernard, Meyerson, Steven Rosenbaum
{"title":"在可制造的Si/SiGe HBT工艺中实现的23 GHz静态1/128分频器","authors":"Michael Case, Sigfried Knorr, Lawrence Larson, Dave Rensch, David Harame, Bernard, Meyerson, Steven Rosenbaum","doi":"10.1109/BIPOL.1995.493879","DOIUrl":null,"url":null,"abstract":"The design and measurements demonstrating a high-sensitivity static 1/128 frequency divider operating to 23 GHz implemented in a manufacturable Si/SiGe HBT process are presented.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A 23 GHz static 1/128 frequency divider implemented in a manufacturable Si/SiGe HBT process\",\"authors\":\"Michael Case, Sigfried Knorr, Lawrence Larson, Dave Rensch, David Harame, Bernard, Meyerson, Steven Rosenbaum\",\"doi\":\"10.1109/BIPOL.1995.493879\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and measurements demonstrating a high-sensitivity static 1/128 frequency divider operating to 23 GHz implemented in a manufacturable Si/SiGe HBT process are presented.\",\"PeriodicalId\":230944,\"journal\":{\"name\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1995.493879\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493879","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 23 GHz static 1/128 frequency divider implemented in a manufacturable Si/SiGe HBT process
The design and measurements demonstrating a high-sensitivity static 1/128 frequency divider operating to 23 GHz implemented in a manufacturable Si/SiGe HBT process are presented.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
