输入矢量控制后硅泄漏电流最小化存在的制造可变性

Y. Alkabani, T. Massey, F. Koushanfar, M. Potkonjak
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引用次数: 50

摘要

我们提出了通过输入矢量控制(IVC)降低硅泄漏后功率的第一种方法,该方法考虑了制造可变性(MV)的影响。由于MV的存在,实现一种设计的集成电路(ic)需要不同的输入向量来达到最低的泄漏状态。我们应对两大挑战。首先是通过测量不同输入的总泄漏功率来提取集成电路的门电平特性。第二个问题是输入向量的快速生成,导致大量实现给定设计的独特ic的低泄漏,但在后制造阶段是不同的。在大量基准实例上的实验结果证明了所提方法的有效性。例如,与之前发表的不考虑MV的IVC技术相比,泄漏功耗平均降低了10.4%以上。
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Input vector control for post-silicon leakage current minimization in the presence of manufacturing variability
We present the first approach for post-silicon leakage power reduction through input vector control (IVC) that takes into account the impact of the manufacturing variability (MV). Because of the MV, the integrated circuits (ICs) implementing one design require different input vectors to achieve their lowest leakage states. We address two major challenges. The first is the extraction of the gate- level characteristics of an IC by measuring only the overall leakage power for different inputs. The second problem is the rapid generation of input vectors that result in a low leakage for a large number of unique ICs that implement a given design, but are different in the post-manufacturing phase. Experimental results on a large set of benchmark instances demonstrate the efficiency of the proposed methods. For example, the leakage power consumption could be reduced in average by more than 10.4%, when compared to the previously published IVC techniques that did not consider MV.
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