T. Yamazaki, Y. Onozawa, M. Otsuki, N. Fujishima, Y. Seki
{"title":"先进的IGBT芯片技术,用于工业电机驱动应用","authors":"T. Yamazaki, Y. Onozawa, M. Otsuki, N. Fujishima, Y. Seki","doi":"10.1109/IPEC.2010.5543295","DOIUrl":null,"url":null,"abstract":"The latest 6th generation (6G) IGBTs chip technology suitable for industrial motor drive applications is described in this paper. The 6G-IGBTs with micro-P structure provide better turn-on di/dt controllability, lower turn-off oscillation and better Von-Eoff trade-off relationship. By using the 6G-IGBTs with micro-P, the turn-on power dissipation can be reduced compared to the conventional IGBTs with floating p-base under the operating condition to set the same FWD reverse recovery dv/dt. The trade-off relationship between the on-state voltage drop and the turn-off power dissipation has been improved without the turn-off oscillation even in a severe condition. The impact of the micro-P structure on these characteristics has been demonstrated by using 600V and 1200V class IGBTs.","PeriodicalId":353540,"journal":{"name":"The 2010 International Power Electronics Conference - ECCE ASIA -","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Advanced IGBT chip technology for industrial motor drive applications\",\"authors\":\"T. Yamazaki, Y. Onozawa, M. Otsuki, N. Fujishima, Y. Seki\",\"doi\":\"10.1109/IPEC.2010.5543295\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The latest 6th generation (6G) IGBTs chip technology suitable for industrial motor drive applications is described in this paper. The 6G-IGBTs with micro-P structure provide better turn-on di/dt controllability, lower turn-off oscillation and better Von-Eoff trade-off relationship. By using the 6G-IGBTs with micro-P, the turn-on power dissipation can be reduced compared to the conventional IGBTs with floating p-base under the operating condition to set the same FWD reverse recovery dv/dt. The trade-off relationship between the on-state voltage drop and the turn-off power dissipation has been improved without the turn-off oscillation even in a severe condition. The impact of the micro-P structure on these characteristics has been demonstrated by using 600V and 1200V class IGBTs.\",\"PeriodicalId\":353540,\"journal\":{\"name\":\"The 2010 International Power Electronics Conference - ECCE ASIA -\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 2010 International Power Electronics Conference - ECCE ASIA -\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPEC.2010.5543295\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 2010 International Power Electronics Conference - ECCE ASIA -","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPEC.2010.5543295","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advanced IGBT chip technology for industrial motor drive applications
The latest 6th generation (6G) IGBTs chip technology suitable for industrial motor drive applications is described in this paper. The 6G-IGBTs with micro-P structure provide better turn-on di/dt controllability, lower turn-off oscillation and better Von-Eoff trade-off relationship. By using the 6G-IGBTs with micro-P, the turn-on power dissipation can be reduced compared to the conventional IGBTs with floating p-base under the operating condition to set the same FWD reverse recovery dv/dt. The trade-off relationship between the on-state voltage drop and the turn-off power dissipation has been improved without the turn-off oscillation even in a severe condition. The impact of the micro-P structure on these characteristics has been demonstrated by using 600V and 1200V class IGBTs.