先进的IGBT芯片技术,用于工业电机驱动应用

T. Yamazaki, Y. Onozawa, M. Otsuki, N. Fujishima, Y. Seki
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引用次数: 2

摘要

本文介绍了适用于工业电机驱动应用的最新第六代(6G) igbt芯片技术。微p结构的6g - igbt具有更好的导通di/dt可控性、更低的关断振荡和更好的Von-Eoff权衡关系。在设定相同的FWD反向恢复dv/dt的工作条件下,与传统的浮动p基igbt相比,采用微p基6g - igbt可以降低导通功耗。改善了导通电压降与关断功耗之间的权衡关系,即使在恶劣条件下也不会产生关断振荡。通过使用600V和1200V级的igbt,证明了微p结构对这些特性的影响。
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Advanced IGBT chip technology for industrial motor drive applications
The latest 6th generation (6G) IGBTs chip technology suitable for industrial motor drive applications is described in this paper. The 6G-IGBTs with micro-P structure provide better turn-on di/dt controllability, lower turn-off oscillation and better Von-Eoff trade-off relationship. By using the 6G-IGBTs with micro-P, the turn-on power dissipation can be reduced compared to the conventional IGBTs with floating p-base under the operating condition to set the same FWD reverse recovery dv/dt. The trade-off relationship between the on-state voltage drop and the turn-off power dissipation has been improved without the turn-off oscillation even in a severe condition. The impact of the micro-P structure on these characteristics has been demonstrated by using 600V and 1200V class IGBTs.
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