{"title":"大面积低电容InGaAs四极光电二极管串扰分析","authors":"S. Datta, A. Joshi, J. Rue","doi":"10.1117/12.2015609","DOIUrl":null,"url":null,"abstract":"We report crosstalk in 1 mm diameter and 2 mm diameter quad InGaAs photodiodes having quadrant-to-quadrant separation of 15 μm, 20 μm, and 25 μm. This crosstalk is a combination of resistive and capacitive coupling between the photodiode quadrants and varies widely on the combination on device diameter, quadrant-to-quadrant separation, illumination conditions, and modulation frequency. Thus, the position sensing accuracy is heavily influenced by the operating conditions of the quad photodiode.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Crosstalk analysis in large-area low-capacitance InGaAs quad photodiodes\",\"authors\":\"S. Datta, A. Joshi, J. Rue\",\"doi\":\"10.1117/12.2015609\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report crosstalk in 1 mm diameter and 2 mm diameter quad InGaAs photodiodes having quadrant-to-quadrant separation of 15 μm, 20 μm, and 25 μm. This crosstalk is a combination of resistive and capacitive coupling between the photodiode quadrants and varies widely on the combination on device diameter, quadrant-to-quadrant separation, illumination conditions, and modulation frequency. Thus, the position sensing accuracy is heavily influenced by the operating conditions of the quad photodiode.\",\"PeriodicalId\":338283,\"journal\":{\"name\":\"Defense, Security, and Sensing\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Defense, Security, and Sensing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2015609\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Defense, Security, and Sensing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2015609","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Crosstalk analysis in large-area low-capacitance InGaAs quad photodiodes
We report crosstalk in 1 mm diameter and 2 mm diameter quad InGaAs photodiodes having quadrant-to-quadrant separation of 15 μm, 20 μm, and 25 μm. This crosstalk is a combination of resistive and capacitive coupling between the photodiode quadrants and varies widely on the combination on device diameter, quadrant-to-quadrant separation, illumination conditions, and modulation frequency. Thus, the position sensing accuracy is heavily influenced by the operating conditions of the quad photodiode.
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