{"title":"用于3.1-10.6 GHz超宽带应用的6mw低噪声放大器","authors":"Varish Diddi, K. V. Srivastava, A. Biswas","doi":"10.1109/NCC.2011.5734714","DOIUrl":null,"url":null,"abstract":"This paper presents a single stage low-noise amplifier (LNA) using cascode topology for low-power UWB applications. Resistive feedback is used to obtain large bandwidth. The LNA achieves peak gain of 11.8 dB and noise figure varying from1.72 – 3.62 dB within the band of 3.1 – 10.6 GHz. The LNA uses supply of 2 V while consuming only 6 mW of dc power. The technology used for design is 0.25 µm IHP SiGe BiCMOS which employs Heterojunction Bipolar Transistor (HBT). The output 1 dB compression point and input IP3 for LNA are −23 dBm and −12.48 dBm respectively.","PeriodicalId":158295,"journal":{"name":"2011 National Conference on Communications (NCC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 6 mW low noise amplifier for 3.1–10.6 GHz UWB application\",\"authors\":\"Varish Diddi, K. V. Srivastava, A. Biswas\",\"doi\":\"10.1109/NCC.2011.5734714\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a single stage low-noise amplifier (LNA) using cascode topology for low-power UWB applications. Resistive feedback is used to obtain large bandwidth. The LNA achieves peak gain of 11.8 dB and noise figure varying from1.72 – 3.62 dB within the band of 3.1 – 10.6 GHz. The LNA uses supply of 2 V while consuming only 6 mW of dc power. The technology used for design is 0.25 µm IHP SiGe BiCMOS which employs Heterojunction Bipolar Transistor (HBT). The output 1 dB compression point and input IP3 for LNA are −23 dBm and −12.48 dBm respectively.\",\"PeriodicalId\":158295,\"journal\":{\"name\":\"2011 National Conference on Communications (NCC)\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-03-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 National Conference on Communications (NCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NCC.2011.5734714\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 National Conference on Communications (NCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NCC.2011.5734714","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 6 mW low noise amplifier for 3.1–10.6 GHz UWB application
This paper presents a single stage low-noise amplifier (LNA) using cascode topology for low-power UWB applications. Resistive feedback is used to obtain large bandwidth. The LNA achieves peak gain of 11.8 dB and noise figure varying from1.72 – 3.62 dB within the band of 3.1 – 10.6 GHz. The LNA uses supply of 2 V while consuming only 6 mW of dc power. The technology used for design is 0.25 µm IHP SiGe BiCMOS which employs Heterojunction Bipolar Transistor (HBT). The output 1 dB compression point and input IP3 for LNA are −23 dBm and −12.48 dBm respectively.
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