通过Helper行减少DRAM访问延迟

Xin Xin, Youtao Zhang, Jun Yang
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引用次数: 4

摘要

DRAM技术的进步在内存密度和吞吐量方面取得了成功,但在减少访问延迟方面却不太成功。这主要是由于基于电容的位存储和访问机制的固有局限性。减少访问延迟已经在文献中得到了很好的探讨。然而,最近提出的DRAM技术,如RowClone和Half-DRAM,为进一步优化访问延迟提供了新的机会。在本文中,我们提出了一种有效的存取策略,通过选择性地放弃恢复来提高DRAM的性能。在激活新行时,我们的技术利用RowClone方法生成该行的副本。下次访问同一行时,将打开克隆行以供检测,但不会将其还原,因为数据保留在原始行中。为了提高我们提出的策略的效率,我们进一步利用了三种方案来最小化复制开销并增加克隆行的重用。实验结果表明,我们提出的策略可以使性能平均提高11%。
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Reducing DRAM Access Latency via Helper Rows
The DRAM technology advancement has seen success in memory density and throughput improvement, but less in access latency reduction. This is mainly due to the intrinsic limitation of capacitance based bit store and access mechanism. The reduction of access latency has been well explored in literature. However, the recently proposed DRAM techniques, such as RowClone and Half-DRAM, offer new opportunities to further optimise the access latency.In this paper, we propose an efficient access strategy to improve the performance of DRAM by optionally discarding the restore. When activating a new row, our technique makes a copy of the row leveraging the RowClone method. Next time when accessing the same row, the cloned row is opened for sensing but it is not restored as the data is preserved in the original row. To improve the efficiency of our proposed strategy, we further exploit three schemes to minimize the copy overhead and increase the reuse of the cloned row. Experimental results show that our proposed strategy can achieve 11% performance improvement on average.
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