{"title":"3M电子束激光器","authors":"J. R. Packard","doi":"10.1364/cleos.1976.thb7","DOIUrl":null,"url":null,"abstract":"The electron beam laser is a technology in which laser emission is generated by exciting a single crystal semiconductor cavity with a high-energy electron beam. A large number of semiconductor materials have been shown capable of producing laser emission in this way. Of significance is that these materials include several II–VI semiconducting compounds from which junction laser emission has not been observed.","PeriodicalId":301658,"journal":{"name":"Conference on Laser and Electrooptical Systems","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"3M electron beam laser\",\"authors\":\"J. R. Packard\",\"doi\":\"10.1364/cleos.1976.thb7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electron beam laser is a technology in which laser emission is generated by exciting a single crystal semiconductor cavity with a high-energy electron beam. A large number of semiconductor materials have been shown capable of producing laser emission in this way. Of significance is that these materials include several II–VI semiconducting compounds from which junction laser emission has not been observed.\",\"PeriodicalId\":301658,\"journal\":{\"name\":\"Conference on Laser and Electrooptical Systems\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference on Laser and Electrooptical Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/cleos.1976.thb7\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference on Laser and Electrooptical Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/cleos.1976.thb7","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The electron beam laser is a technology in which laser emission is generated by exciting a single crystal semiconductor cavity with a high-energy electron beam. A large number of semiconductor materials have been shown capable of producing laser emission in this way. Of significance is that these materials include several II–VI semiconducting compounds from which junction laser emission has not been observed.
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