4建筑综合体SiCl←O = C [N (CH) 2] 2和再分配其教育结果估计ab initio电子密度

{"title":"4建筑综合体SiCl←O = C [N (CH) 2] 2和再分配其教育结果估计ab initio电子密度","authors":"В. П. Фешин, Е. В. Фешина","doi":"10.1134/S0044457X19090113","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":360124,"journal":{"name":"Журнал неорганической химии","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Строение комплекса SiCl\\n \\n 4\\n \\n ←O=C[N(CH\\n \\n 3\\n \\n )\\n \\n 2\\n \\n ]\\n \\n 2\\n \\n и перераспределение электронной плотности при его образовании по результатам расчетов\\n \\n ab initio\",\"authors\":\"В. П. Фешин, Е. В. Фешина\",\"doi\":\"10.1134/S0044457X19090113\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":360124,\"journal\":{\"name\":\"Журнал неорганической химии\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Журнал неорганической химии\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1134/S0044457X19090113\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Журнал неорганической химии","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/S0044457X19090113","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}