Ye Jiang, T. Lu, Liqiang Yuan, Zhengming Zhao, F. He
{"title":"hv - igbt状态反馈有源箝位电路仿真分析","authors":"Ye Jiang, T. Lu, Liqiang Yuan, Zhengming Zhao, F. He","doi":"10.1109/PEAC.2014.7038026","DOIUrl":null,"url":null,"abstract":"Based on the existing voltage balancing scheme for two series HV-IGBTs (High voltage insulated gate bipolar transistors) with active clamping and status feedback, this paper focuses on the characteristics of IGBT with active clamping circuit. First, the previous series IGBT model is improved according to the experiment results in order to give accurate feedback signal in the active clamping sub-circuit. Then the effect of the load current, the gate drive delay and clamping threshold on feedback signal is studied by simulation. According to the analysis above, the voltage balancing scheme with status feedback is applied to multiple series IGBTs and is proved feasible by simulation.","PeriodicalId":309780,"journal":{"name":"2014 International Power Electronics and Application Conference and Exposition","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation analysis of active clamping circuit with status feedback for HV-IGBTs\",\"authors\":\"Ye Jiang, T. Lu, Liqiang Yuan, Zhengming Zhao, F. He\",\"doi\":\"10.1109/PEAC.2014.7038026\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Based on the existing voltage balancing scheme for two series HV-IGBTs (High voltage insulated gate bipolar transistors) with active clamping and status feedback, this paper focuses on the characteristics of IGBT with active clamping circuit. First, the previous series IGBT model is improved according to the experiment results in order to give accurate feedback signal in the active clamping sub-circuit. Then the effect of the load current, the gate drive delay and clamping threshold on feedback signal is studied by simulation. According to the analysis above, the voltage balancing scheme with status feedback is applied to multiple series IGBTs and is proved feasible by simulation.\",\"PeriodicalId\":309780,\"journal\":{\"name\":\"2014 International Power Electronics and Application Conference and Exposition\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Power Electronics and Application Conference and Exposition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PEAC.2014.7038026\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Power Electronics and Application Conference and Exposition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEAC.2014.7038026","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation analysis of active clamping circuit with status feedback for HV-IGBTs
Based on the existing voltage balancing scheme for two series HV-IGBTs (High voltage insulated gate bipolar transistors) with active clamping and status feedback, this paper focuses on the characteristics of IGBT with active clamping circuit. First, the previous series IGBT model is improved according to the experiment results in order to give accurate feedback signal in the active clamping sub-circuit. Then the effect of the load current, the gate drive delay and clamping threshold on feedback signal is studied by simulation. According to the analysis above, the voltage balancing scheme with status feedback is applied to multiple series IGBTs and is proved feasible by simulation.
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