玛土撒拉闪存:重写代码以获得超长存储寿命

Georgios Mappouras, Alireza Vahid, A. Calderbank, Daniel J. Sorin
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引用次数: 3

摘要

受嵌入式系统和数据中心需要长寿命组件的启发,我们使用重写代码来延长闪存的寿命,重写代码允许在需要擦除之前对页面进行多次写入。尽管研究人员之前已经为此目的探索了重写代码,但我们在之前的工作之外做出了两个重大贡献。首先,我们删除了在先前的耐力编码工作中使用的理想化和不切实际的乐观的闪光单元的假设。不幸的是,当前的Flash技术有一个非理想的接口,由于其底层的物理设计,并且不能,例如,允许所有看似可能的细胞水平的增加。我们展示了如何提供理想的多级单元接口,通过开发一个虚拟的Flash单元,我们评估其对现有的耐久性代码的影响。我们的第二个贡献是我们开发了新的耐久性代码,称为玛士撒拉闪光代码(MFC),它提供了比以前研究过的代码更好的成本/寿命权衡。
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Methuselah Flash: Rewriting Codes for Extra Long Storage Lifetime
Motivated by embedded systems and datacenters that require long-life components, we extend the lifetime of Flash memory using rewriting codes that allow for multiple writes to a page before it needs to be erased. Although researchers have previously explored rewriting codes for this purpose, we make two significant contributions beyond prior work. First, we remove the assumption of idealized -- and unrealistically optimistic -- Flash cells used in prior work on endurance codes. Unfortunately, current Flash technology has a non-ideal interface, due to its underlying physical design, and does not, for example, allow all seemingly possible increases in a cell's level. We show how to provide the ideal multi-level cell interface, by developing a virtual Flash cell, and we evaluate its impact on existing endurance codes. Our second contribution is our development of novel endurance codes, called Methuselah Flash Codes (MFC), that provide better cost/lifetime trade-offs than previously studied codes.
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