L. Mastronardi, M. Banakar, A. Khokhar, N. Hattasan, T. Rutirawut, T. D. Bucio, K. Grabska, C. Littlejohns, Alexandre Bazin, G. Mashanovich, F. Gardes
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We present experimental measurements of an EAM modulator developed on an 800 nm SOI platform working at 1566 nm with dynamic ER of 5.2 dB at 56 Gb/s, EO bandwidth of 56 GHz and power consumption of 44 fJ/bit.