Cao Wan, Lingling Sun, G. Su, Xiangyu Lv, J. Wen, Xiang Wang
{"title":"一种采用65nm CMOS差分并联电感的280GHz超级再生接收器","authors":"Cao Wan, Lingling Sun, G. Su, Xiangyu Lv, J. Wen, Xiang Wang","doi":"10.1109/ICMMT.2018.8563610","DOIUrl":null,"url":null,"abstract":"Base on 65nm CMOS process, a super-regenerative receiver (SRR) is proposed in this paper. By using a novel differential parallel inductor (DPI), the SRR realizes high sensitivity. The simulated results show that the sensitivity of the SRR is -90dBm, the 3dB bandwidth is 2.3GHz, and the gain is larger than 13.5dB in its range of the 3dB bandwidth. The power consumption is 10.4 mW while applying 1.2-V power supply. The core area is 0.013 mm2.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 280GHz Super Regenerative Receiver with Differential Parallel Inductor in 65nm CMOS\",\"authors\":\"Cao Wan, Lingling Sun, G. Su, Xiangyu Lv, J. Wen, Xiang Wang\",\"doi\":\"10.1109/ICMMT.2018.8563610\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Base on 65nm CMOS process, a super-regenerative receiver (SRR) is proposed in this paper. By using a novel differential parallel inductor (DPI), the SRR realizes high sensitivity. The simulated results show that the sensitivity of the SRR is -90dBm, the 3dB bandwidth is 2.3GHz, and the gain is larger than 13.5dB in its range of the 3dB bandwidth. The power consumption is 10.4 mW while applying 1.2-V power supply. The core area is 0.013 mm2.\",\"PeriodicalId\":190601,\"journal\":{\"name\":\"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2018.8563610\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2018.8563610","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 280GHz Super Regenerative Receiver with Differential Parallel Inductor in 65nm CMOS
Base on 65nm CMOS process, a super-regenerative receiver (SRR) is proposed in this paper. By using a novel differential parallel inductor (DPI), the SRR realizes high sensitivity. The simulated results show that the sensitivity of the SRR is -90dBm, the 3dB bandwidth is 2.3GHz, and the gain is larger than 13.5dB in its range of the 3dB bandwidth. The power consumption is 10.4 mW while applying 1.2-V power supply. The core area is 0.013 mm2.
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