相控阵雷达用硅锗

2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI:10.1109/EMICC.2008.4772280

H. Berg, H. Thiesies, E. Hemmendorff, Georgios Sidiropoulos, J. Hedman

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引用次数: 5

摘要

在低成本的标准硅工艺中实现了相位和幅度控制集成电路。S, C和x波段的几个集成电路的设计表明，硅锗是砷化镓的有力竞争者，在最低噪声系数并不重要的情况下。这也适用于适用于军用有源相控阵雷达的T/ r模块。本文所介绍的电路是由奥地利微系统公司在其0.35 μ m SiGe-BiCMOS工艺中制造的，fT为70 GHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Silicon-Germanium for Phased Array Radars

Phase and amplitude controlling ICs realized in a low cost standard silicon process are demonstrated. The design of several ICs at S-, C- and X-band has shown that silicon germanium is a strong contender to gallium arsenide where lowest noise figure is not vital. This applies also to the T/R-modules suited for military AESA-radars. The circuits presented in this paper are manufactured by austriamicrosystems in their 0.35 mum SiGe-BiCMOS process with an fT of 70 GHz.

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2008 European Microwave Integrated Circuit Conference

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