超宽带、大功率、高效率氮化镓放大器

2013 IEEE International Wireless Symposium (IWS) Pub Date : 2013-04-14 DOI:10.1109/IEEE-IWS.2013.6616737

By Amin Ezzeddine, A. Hung, E. Viveiros, Ho-Chung Huang

{"title":"超宽带、大功率、高效率氮化镓放大器","authors":"By Amin Ezzeddine, A. Hung, E. Viveiros, Ho-Chung Huang","doi":"10.1109/IEEE-IWS.2013.6616737","DOIUrl":null,"url":null,"abstract":"We report a high-performance GaN amplifier operating from 100MHz to 3,000MHz. The best results included 100W output power, 22dB gain with 40% power-added-efficiency from 100MHz to 3,000MHz. This performance is achieved by tailoring both the device impedance and by using unique wide-band circuit matching topology. Detailed design technique of both device and matching circuit will be presented.","PeriodicalId":344851,"journal":{"name":"2013 IEEE International Wireless Symposium (IWS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Ultra wide-band, high-power, high-efficiency GaN amplifier\",\"authors\":\"By Amin Ezzeddine, A. Hung, E. Viveiros, Ho-Chung Huang\",\"doi\":\"10.1109/IEEE-IWS.2013.6616737\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a high-performance GaN amplifier operating from 100MHz to 3,000MHz. The best results included 100W output power, 22dB gain with 40% power-added-efficiency from 100MHz to 3,000MHz. This performance is achieved by tailoring both the device impedance and by using unique wide-band circuit matching topology. Detailed design technique of both device and matching circuit will be presented.\",\"PeriodicalId\":344851,\"journal\":{\"name\":\"2013 IEEE International Wireless Symposium (IWS)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2013.6616737\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2013.6616737","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

我们报告了一种工作频率为100MHz至3000mhz的高性能GaN放大器。最佳结果包括100W输出功率，22dB增益和40%的功率附加效率，从100MHz到3000mhz。这种性能是通过定制器件阻抗和使用独特的宽带电路匹配拓扑来实现的。详细介绍了器件和匹配电路的设计方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ultra wide-band, high-power, high-efficiency GaN amplifier

We report a high-performance GaN amplifier operating from 100MHz to 3,000MHz. The best results included 100W output power, 22dB gain with 40% power-added-efficiency from 100MHz to 3,000MHz. This performance is achieved by tailoring both the device impedance and by using unique wide-band circuit matching topology. Detailed design technique of both device and matching circuit will be presented.

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2013 IEEE International Wireless Symposium (IWS)

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