W. Ciccognani, F. Giannini, E. Limit, P. Longhi, M.A. Nanni, A. Serino, C. Lanzieri, M. Peroni, P. Romanini, V. Camarchia, M. Pirola, G. Ghione
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GaN Device Technology: Manufacturing, Characterization, Modelling and Verification
Gallium Nitride's superior physical properties, in comparison with other semiconductors, make GaNHEMT active devices a prime candidate in the implementation of next generation transmitters for radar systems, 3G/4G base stations and WiMAX. In this contribution, the characterization, modelling and verification of different families of high efficiency, high- power devices manufactured at SELEX Sistemi Integrati are reported. Process, characterization and modelling phases are analyzed to improve and refine the technology's fabrication techniques, thermal degradation issues and dispersion phenomena.
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