{"title":"CMOS兼容Ge和on - axis Si(001)平台上的C/ l波段InAs量子点","authors":"Ting Wang, Wenqi Wei, Bin Zhang, Jianhuan Wang, Qi Feng, Jianjun Zhang","doi":"10.1364/CLEOPR.2018.W1F.3","DOIUrl":null,"url":null,"abstract":"In recent years, the growing demand for silicon based light sources has boosted the research field of III-V/IV hybrid lasers. Here, the C/L-band light emission (1.53 μm-1.63 μ m)of InAs/In0.25Ga0.75As quantum dots (QDs)epitaxially grown on CMOS-compatible Ge and U-shape Si (001)substrates by solid-source molecular beam enitaxy (MBE)are reported.","PeriodicalId":184212,"journal":{"name":"2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"C/L-Band InAs QDs on CMOS Compatible Ge and On-Axis Si (001) Platform\",\"authors\":\"Ting Wang, Wenqi Wei, Bin Zhang, Jianhuan Wang, Qi Feng, Jianjun Zhang\",\"doi\":\"10.1364/CLEOPR.2018.W1F.3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In recent years, the growing demand for silicon based light sources has boosted the research field of III-V/IV hybrid lasers. Here, the C/L-band light emission (1.53 μm-1.63 μ m)of InAs/In0.25Ga0.75As quantum dots (QDs)epitaxially grown on CMOS-compatible Ge and U-shape Si (001)substrates by solid-source molecular beam enitaxy (MBE)are reported.\",\"PeriodicalId\":184212,\"journal\":{\"name\":\"2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/CLEOPR.2018.W1F.3\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/CLEOPR.2018.W1F.3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
C/L-Band InAs QDs on CMOS Compatible Ge and On-Axis Si (001) Platform
In recent years, the growing demand for silicon based light sources has boosted the research field of III-V/IV hybrid lasers. Here, the C/L-band light emission (1.53 μm-1.63 μ m)of InAs/In0.25Ga0.75As quantum dots (QDs)epitaxially grown on CMOS-compatible Ge and U-shape Si (001)substrates by solid-source molecular beam enitaxy (MBE)are reported.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
