基于忆阻器的射频单极双掷开关

J. Vavra, J. Bajer, D. Biolek
{"title":"基于忆阻器的射频单极双掷开关","authors":"J. Vavra, J. Bajer, D. Biolek","doi":"10.23919/RADIO.2018.8572400","DOIUrl":null,"url":null,"abstract":"In this paper, the RF single-pole double-throw switch based on memistor is presented. This idea combines features of FET-based RF switches and already published memristor-based switches. The circuit function does not require the continuous DC bias signal and therefore either auxiliary capacitors or inductors. The SPICE simulations are based on the model obtained from physical measurements reported in the literature.","PeriodicalId":365518,"journal":{"name":"2018 IEEE Radio and Antenna Days of the Indian Ocean (RADIO)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"RF Single-Pole Double-Throw Switch Based on Memistor\",\"authors\":\"J. Vavra, J. Bajer, D. Biolek\",\"doi\":\"10.23919/RADIO.2018.8572400\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the RF single-pole double-throw switch based on memistor is presented. This idea combines features of FET-based RF switches and already published memristor-based switches. The circuit function does not require the continuous DC bias signal and therefore either auxiliary capacitors or inductors. The SPICE simulations are based on the model obtained from physical measurements reported in the literature.\",\"PeriodicalId\":365518,\"journal\":{\"name\":\"2018 IEEE Radio and Antenna Days of the Indian Ocean (RADIO)\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Radio and Antenna Days of the Indian Ocean (RADIO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/RADIO.2018.8572400\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Radio and Antenna Days of the Indian Ocean (RADIO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/RADIO.2018.8572400","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文介绍了一种基于忆阻器的射频单极双掷开关。这个想法结合了基于fet的射频开关和已经发布的基于忆阻器的开关的特点。电路功能不需要连续的直流偏置信号,因此不需要辅助电容器或电感。SPICE模拟是基于从文献中报道的物理测量中获得的模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
RF Single-Pole Double-Throw Switch Based on Memistor
In this paper, the RF single-pole double-throw switch based on memistor is presented. This idea combines features of FET-based RF switches and already published memristor-based switches. The circuit function does not require the continuous DC bias signal and therefore either auxiliary capacitors or inductors. The SPICE simulations are based on the model obtained from physical measurements reported in the literature.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
High Gain Fractal Cylindrical Dielectric Resonator Antenna for UWB Application Games with Resources and Biological Effects of Radiowaves Circular SRR Shaped UWB Antenna with WiMAX Band Notch Characteristics On the DC Power Budget and RF Performance Study of a Linearized 1 Watt Medium RF Power Amplifier for Enterprise Wireless BS Applications Reciprocal Optimized Surface Impedance Multiple Angle Retro-Reflective Metasurfaces
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1