{"title":"基于小波的碳化硅BJT建模与仿真方法","authors":"Xiuting Lv, Ping-an Tan","doi":"10.1109/PEAC.2014.7038022","DOIUrl":null,"url":null,"abstract":"This paper focuses on the modeling and simulation of silicon carbide(SiC) bipolar junction transistor(BJT). SiC BJT is modeled in MATLAB using internal dynamical equation, and the Haar wavelet method is used to solve the ambipolar diffusion equation (ADE). The simulation results of switching waveforms of SiC BJT are given, which verify the validity of this method.","PeriodicalId":309780,"journal":{"name":"2014 International Power Electronics and Application Conference and Exposition","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A wavelet based method for modeling and simulation of a SiC BJT\",\"authors\":\"Xiuting Lv, Ping-an Tan\",\"doi\":\"10.1109/PEAC.2014.7038022\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper focuses on the modeling and simulation of silicon carbide(SiC) bipolar junction transistor(BJT). SiC BJT is modeled in MATLAB using internal dynamical equation, and the Haar wavelet method is used to solve the ambipolar diffusion equation (ADE). The simulation results of switching waveforms of SiC BJT are given, which verify the validity of this method.\",\"PeriodicalId\":309780,\"journal\":{\"name\":\"2014 International Power Electronics and Application Conference and Exposition\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Power Electronics and Application Conference and Exposition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PEAC.2014.7038022\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Power Electronics and Application Conference and Exposition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEAC.2014.7038022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A wavelet based method for modeling and simulation of a SiC BJT
This paper focuses on the modeling and simulation of silicon carbide(SiC) bipolar junction transistor(BJT). SiC BJT is modeled in MATLAB using internal dynamical equation, and the Haar wavelet method is used to solve the ambipolar diffusion equation (ADE). The simulation results of switching waveforms of SiC BJT are given, which verify the validity of this method.
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