具有量子点活跃区的微磁盘在室温下在1300nm附近激光

Conference on Lasers and Electro-Optics, 2003. CLEO '03. Pub Date : 2003-06-06 DOI:10.1049/EL:20031058

Tian Yang, Jiangrong Cao, Po-Tsung Lee, Min Hsiung Shih, R. Shafiiha, S. Farrell, John D. O'Brien, O. Shchekin, D. Deppe

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引用次数: 15

摘要

首次报道了带InAs量子点活性区的微盘在1300nm附近的激光。在室温下光泵浦微盘，在直径大于2.5 /spl mu/m的器件上产生激光。

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Microdisks with quantum dot active regions lasing near 1300 nm at room-temperature

Lasing near 1300 nm in microdisks with InAs quantum dot active regions is reported for the first time. The microdisks were optically pumped at room temperature, and lasing occurred in devices that are 2.5 /spl mu/m in diameter and larger.

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Conference on Lasers and Electro-Optics, 2003. CLEO '03.

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