{"title":"非晶硅高速率氦强化PECVD制备新型A-Si:H探测器的表征","authors":"T. Pochet, A. Ilie, F. Foulon, B. Equer","doi":"10.1109/NSSMIC.1993.701702","DOIUrl":null,"url":null,"abstract":"This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH/sub 4/ in Helium by PECVD (plasma enhanced chemical vapor deposition) technique. Rates up to ten times (5.5 /spl mu/m/h) that of the standard technique are obtained. We have investigated the electrical characteristics -depletion voltage, residual space charge density- of the helium diluted material and compared them to that of the standard material. Finally, the response of detectors, fabricated from both materials, to 5.5 MeV alpha particles are compared. >","PeriodicalId":287813,"journal":{"name":"1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Characterization Of New A-Si:H Detectors Fabricated From Amorphous Silicon Deposited At High Rate By Helium Enhanced PECVD\",\"authors\":\"T. Pochet, A. Ilie, F. Foulon, B. Equer\",\"doi\":\"10.1109/NSSMIC.1993.701702\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH/sub 4/ in Helium by PECVD (plasma enhanced chemical vapor deposition) technique. Rates up to ten times (5.5 /spl mu/m/h) that of the standard technique are obtained. We have investigated the electrical characteristics -depletion voltage, residual space charge density- of the helium diluted material and compared them to that of the standard material. Finally, the response of detectors, fabricated from both materials, to 5.5 MeV alpha particles are compared. >\",\"PeriodicalId\":287813,\"journal\":{\"name\":\"1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSSMIC.1993.701702\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSSMIC.1993.701702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization Of New A-Si:H Detectors Fabricated From Amorphous Silicon Deposited At High Rate By Helium Enhanced PECVD
This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH/sub 4/ in Helium by PECVD (plasma enhanced chemical vapor deposition) technique. Rates up to ten times (5.5 /spl mu/m/h) that of the standard technique are obtained. We have investigated the electrical characteristics -depletion voltage, residual space charge density- of the helium diluted material and compared them to that of the standard material. Finally, the response of detectors, fabricated from both materials, to 5.5 MeV alpha particles are compared. >
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
