用于多波段应用的宽带高效氮化镓射频功率放大器

Proceedings of 2014 Mediterranean Microwave Symposium (MMS2014) Pub Date : 2014-12-01 DOI:10.1109/MMS.2014.7088969

H. Taghavi, M. Akbarpour, S. Rezaei, F. Ghannouchi

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引用次数: 1

摘要

提出了一种基于有源器件特性的宽带功率放大器设计方法。与其他宽带设计技术相比，该方法不局限于波形操纵;因此，多八度的性能是可以实现的。GaN HEMT封装和芯片器件模型用于验证该方法在非常大的带宽下显示出高效率的性能。仿真结果表明，在0.5-4 GHz范围内，封装器件模型的PAE高于60%，在0.3-3.5 GHz范围内，PAE高于50%。

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Broadband high efficiency GaN RF power amplifier for multi-band applications

This paper presents the broadband power amplifier design based on characterized behavior of the active device. Compared with other broadband design techniques, this approach is not limited to waveform manipulating; hence, multi octave performance is achievable. GaN HEMT package and die device models are used to verify this approach showing high efficiency performance over very large bandwidth. Simulation results show PAE of higher than 60% over 0.5-4 GHz for die and higher than 50% over 0.3-3.5 GHz for package device models.

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Proceedings of 2014 Mediterranean Microwave Symposium (MMS2014)

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