AVSS 2011演示会议

Frederic Garcia, B. Mirbach, Ángel Cuesta-Contreras
{"title":"AVSS 2011演示会议","authors":"Frederic Garcia, B. Mirbach, Ángel Cuesta-Contreras","doi":"10.1109/AVSS.2011.6027397","DOIUrl":null,"url":null,"abstract":"Summary form only given. In order to maintain the trend of ever-increasing performance, several directions have been pursued by the semiconductor industry in the past decade. i) Conventional Si and SiO 2 are being replaced by more exotic materials, from high-k gate dielectrics to metal gates and to high-mobility substrates, ii) new (3D) device architectures are being developed, iii) devices are downscaled toward atomic dimensions, while iv) supply voltages are not correspondingly reduced.","PeriodicalId":332995,"journal":{"name":"Advanced Video and Signal Based Surveillance","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"AVSS 2011 demo session\",\"authors\":\"Frederic Garcia, B. Mirbach, Ángel Cuesta-Contreras\",\"doi\":\"10.1109/AVSS.2011.6027397\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. In order to maintain the trend of ever-increasing performance, several directions have been pursued by the semiconductor industry in the past decade. i) Conventional Si and SiO 2 are being replaced by more exotic materials, from high-k gate dielectrics to metal gates and to high-mobility substrates, ii) new (3D) device architectures are being developed, iii) devices are downscaled toward atomic dimensions, while iv) supply voltages are not correspondingly reduced.\",\"PeriodicalId\":332995,\"journal\":{\"name\":\"Advanced Video and Signal Based Surveillance\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Video and Signal Based Surveillance\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AVSS.2011.6027397\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Video and Signal Based Surveillance","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AVSS.2011.6027397","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

只提供摘要形式。为了保持性能不断提高的趋势,半导体行业在过去十年中一直在追求几个方向。i)传统的Si和sio2正在被更奇特的材料所取代,从高k栅极电介质到金属栅极和高迁移率基板,ii)新的(3D)器件架构正在开发中,iii)器件缩小到原子尺寸,而iv)电源电压没有相应降低。
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AVSS 2011 demo session
Summary form only given. In order to maintain the trend of ever-increasing performance, several directions have been pursued by the semiconductor industry in the past decade. i) Conventional Si and SiO 2 are being replaced by more exotic materials, from high-k gate dielectrics to metal gates and to high-mobility substrates, ii) new (3D) device architectures are being developed, iii) devices are downscaled toward atomic dimensions, while iv) supply voltages are not correspondingly reduced.
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