Comparison Power of Semiconductor Lasers at wavelength 1480nm using InGaAs InGaAsP Materials for EDFA Pumping Scheme

Long distance Optical Communications are affected by many problems; loss of signal is one of them. Erbium Doped Fiber Amplifier (EDFA) is the key to solve it. By using Semiconductor Laser as pumping source for EDFA, the signal can be brought back to it is normal condition. EDFA has a good wavelength operation at 1480nm. To achieve selected wavelength, we must construct the Semiconductor Laser that suitable in 1480nm. In that case, InGaAs and InGaAsP are the base materials to construct the Semiconductor Laser. At wavelength of 1480nm the materials that used are InGaAs and InGaAsP. The reason is it is suitable for wavelength selection. By using selected wavelength and materials, the Semiconductor Laser can be produced properly. Also, determining the parameter is the important thing to construct the Laser. By using Rate Equation, comparison of output power for InGaAs and InGaAsP at wavelength of 1480nm based on rate equation and can obtained four result. Those are injection current vs voltage, carrier density, photon density and output power vs injection current.