SEM计量过程中装药效应的有限元模拟

D. Nguyen, J. Tortai, M. Abaidi, P. Schiavone
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引用次数: 1

摘要

扫描电镜测量技术广泛应用于微电子领域,以控制图形加工后的尺寸。通过验证实验尺寸与目标尺寸匹配来实现过程控制。然而,如果发生强电荷,扫描电镜测量可能会给出错误的测量结果。电荷效应影响扫描电镜图像的对比度,并产生伪影。本文拟报道电子枪扫描样品时发生的物理现象的建模和电荷效应是如何发生的。为此,考虑了电子的漂移动力学和扩散动力学,建立了电荷动力学模型。利用FEniCS开放软件求解相应的偏微分方程组。首先,我们证明了当只对顶视图测量建模时,不能预测SEM图像的典型对比度。其次,对截面视图进行建模。这一次,获得了预期的对比行为。最后,给出了一个全三维仿真。
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FEM simulation of charging effect during SEM metrology
SEM metrology is widely used in microelectronics to control patterns dimensions after many processes, especially patterning. Process control is achieved by verifying that experimental dimensions match targeted ones. However SEM metrology may give erroneous measurements if strong charging occurs. Charging effect impacts on the SEM image contrast and introduces artefacts. This article intends to report on the modeling of the physical phenomena occurring when the electron gun scans a sample and how charging effect occurs. For this, charge dynamics are modeled by taking into account the drift kinetics and the diffusion of electrons. The corresponding Partial Differential Equation system is solved using FEniCS open software. First, we show that when only top view measurement are modeled, the typical contrast of SEM pictures can not be predicted. Second, cross section views are modeled. This time, the expected contrast behavior is obtained. Finally, a full 3D simulation is presented.
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