S. Sarathkrishna, K. Balamurugan, M. N. Devi, M. Jayakumar
{"title":"基于GaN HEMT的CPW匹配LNA的设计与分析","authors":"S. Sarathkrishna, K. Balamurugan, M. N. Devi, M. Jayakumar","doi":"10.1109/WOCN.2014.6923066","DOIUrl":null,"url":null,"abstract":"GaN based devices are in great demand due to its rugged characteristics at extreme conditions. In this paper, design of GaN monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) with coplanar waveguide matching is presented to understand the key aspects of high gain, low noise figure and high linearity. The LNA can be used in base station technologies as frequency of interest is from 0.6-3 GHz. It delivers gain of 23 dB and noise figure 0.3 dB and OIP3 upto 51 dBm. The linear performance presented here enables reconfigurable designs of LNA over multiple octaves of bandwidth.","PeriodicalId":149158,"journal":{"name":"2014 Eleventh International Conference on Wireless and Optical Communications Networks (WOCN)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Design and analysis of GaN HEMT based LNA with CPW matching\",\"authors\":\"S. Sarathkrishna, K. Balamurugan, M. N. Devi, M. Jayakumar\",\"doi\":\"10.1109/WOCN.2014.6923066\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaN based devices are in great demand due to its rugged characteristics at extreme conditions. In this paper, design of GaN monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) with coplanar waveguide matching is presented to understand the key aspects of high gain, low noise figure and high linearity. The LNA can be used in base station technologies as frequency of interest is from 0.6-3 GHz. It delivers gain of 23 dB and noise figure 0.3 dB and OIP3 upto 51 dBm. The linear performance presented here enables reconfigurable designs of LNA over multiple octaves of bandwidth.\",\"PeriodicalId\":149158,\"journal\":{\"name\":\"2014 Eleventh International Conference on Wireless and Optical Communications Networks (WOCN)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Eleventh International Conference on Wireless and Optical Communications Networks (WOCN)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOCN.2014.6923066\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Eleventh International Conference on Wireless and Optical Communications Networks (WOCN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOCN.2014.6923066","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and analysis of GaN HEMT based LNA with CPW matching
GaN based devices are in great demand due to its rugged characteristics at extreme conditions. In this paper, design of GaN monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) with coplanar waveguide matching is presented to understand the key aspects of high gain, low noise figure and high linearity. The LNA can be used in base station technologies as frequency of interest is from 0.6-3 GHz. It delivers gain of 23 dB and noise figure 0.3 dB and OIP3 upto 51 dBm. The linear performance presented here enables reconfigurable designs of LNA over multiple octaves of bandwidth.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
