{"title":"外延双极器件中扩散光电流的二维计算","authors":"D. E. Dunn, C. A. Paz de Araújo","doi":"10.1109/REG5.1988.15904","DOIUrl":null,"url":null,"abstract":"A 2D finite-difference model is presented that provides significant improvement over existing analytical approximations for the diffusive photocurrent generated in the collector by an epitaxial bipolar device when exposed to ionizing radiation. The model is used to gauge the effect of surface recombination on the amount of photocurrent generated. It is also used to compare the accuracy of several analytical approximations previously published in the literature.<<ETX>>","PeriodicalId":126733,"journal":{"name":"IEEE Region 5 Conference, 1988: 'Spanning the Peaks of Electrotechnology'","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two dimensional calculation of diffusive photocurrent in epitaxial bipolar devices\",\"authors\":\"D. E. Dunn, C. A. Paz de Araújo\",\"doi\":\"10.1109/REG5.1988.15904\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 2D finite-difference model is presented that provides significant improvement over existing analytical approximations for the diffusive photocurrent generated in the collector by an epitaxial bipolar device when exposed to ionizing radiation. The model is used to gauge the effect of surface recombination on the amount of photocurrent generated. It is also used to compare the accuracy of several analytical approximations previously published in the literature.<<ETX>>\",\"PeriodicalId\":126733,\"journal\":{\"name\":\"IEEE Region 5 Conference, 1988: 'Spanning the Peaks of Electrotechnology'\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Region 5 Conference, 1988: 'Spanning the Peaks of Electrotechnology'\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REG5.1988.15904\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Region 5 Conference, 1988: 'Spanning the Peaks of Electrotechnology'","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REG5.1988.15904","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two dimensional calculation of diffusive photocurrent in epitaxial bipolar devices
A 2D finite-difference model is presented that provides significant improvement over existing analytical approximations for the diffusive photocurrent generated in the collector by an epitaxial bipolar device when exposed to ionizing radiation. The model is used to gauge the effect of surface recombination on the amount of photocurrent generated. It is also used to compare the accuracy of several analytical approximations previously published in the literature.<>
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