H. Carrère, C. Calò, A. Balocchi, Joshya Shyamala Rapagopal, X. Marie, Arnaud Wilk, Quentin Hochart, O. Delorme
{"title":"用于宽带放大的材料","authors":"H. Carrère, C. Calò, A. Balocchi, Joshya Shyamala Rapagopal, X. Marie, Arnaud Wilk, Quentin Hochart, O. Delorme","doi":"10.1109/CSNDSP54353.2022.9907902","DOIUrl":null,"url":null,"abstract":"The material gain of InGaAsP/InGaAsP quantum-well active layers is calculated, including tetragonal strain and confinement effects. For compressively strained structures, the calculated optical bandwidth reaches 150 nm. For structures under tensile strain, the optical bandwidth reaches 110 nm with a polarization sensitivity which is lower than 1 dB between TE and TM emissions over the -3dB optical bandwidth. Further enlargement of the optical bandwidth is expected by reducing the quantum well width.","PeriodicalId":288069,"journal":{"name":"2022 13th International Symposium on Communication Systems, Networks and Digital Signal Processing (CSNDSP)","volume":"280 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Materials for wide-band amplification\",\"authors\":\"H. Carrère, C. Calò, A. Balocchi, Joshya Shyamala Rapagopal, X. Marie, Arnaud Wilk, Quentin Hochart, O. Delorme\",\"doi\":\"10.1109/CSNDSP54353.2022.9907902\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The material gain of InGaAsP/InGaAsP quantum-well active layers is calculated, including tetragonal strain and confinement effects. For compressively strained structures, the calculated optical bandwidth reaches 150 nm. For structures under tensile strain, the optical bandwidth reaches 110 nm with a polarization sensitivity which is lower than 1 dB between TE and TM emissions over the -3dB optical bandwidth. Further enlargement of the optical bandwidth is expected by reducing the quantum well width.\",\"PeriodicalId\":288069,\"journal\":{\"name\":\"2022 13th International Symposium on Communication Systems, Networks and Digital Signal Processing (CSNDSP)\",\"volume\":\"280 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 13th International Symposium on Communication Systems, Networks and Digital Signal Processing (CSNDSP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSNDSP54353.2022.9907902\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 13th International Symposium on Communication Systems, Networks and Digital Signal Processing (CSNDSP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSNDSP54353.2022.9907902","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The material gain of InGaAsP/InGaAsP quantum-well active layers is calculated, including tetragonal strain and confinement effects. For compressively strained structures, the calculated optical bandwidth reaches 150 nm. For structures under tensile strain, the optical bandwidth reaches 110 nm with a polarization sensitivity which is lower than 1 dB between TE and TM emissions over the -3dB optical bandwidth. Further enlargement of the optical bandwidth is expected by reducing the quantum well width.
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