{"title":"卫星通信用GaN HEMT e类功率放大器的设计","authors":"Jingyuan Wang, Hongxi Yu, Fei Yang","doi":"10.1109/ICMMT.2018.8563446","DOIUrl":null,"url":null,"abstract":"This paper proposed a design of micro-strip line class-E power amplifier based on GaN HEMT devices working at 2.2GHz. By means of part harmonics suppression and inductance effect enhancing in the drain bias circuit, ideal class-E voltage and current waveform at drain and high efficiency were achieved. The combining simulation results demonstrate 74.8% PAE, 15.1dB power gain and 41.16dBm output power with 26dBm input power.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Design of GaN HEMT Class-E Power Amplifier for Satellite Communication\",\"authors\":\"Jingyuan Wang, Hongxi Yu, Fei Yang\",\"doi\":\"10.1109/ICMMT.2018.8563446\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposed a design of micro-strip line class-E power amplifier based on GaN HEMT devices working at 2.2GHz. By means of part harmonics suppression and inductance effect enhancing in the drain bias circuit, ideal class-E voltage and current waveform at drain and high efficiency were achieved. The combining simulation results demonstrate 74.8% PAE, 15.1dB power gain and 41.16dBm output power with 26dBm input power.\",\"PeriodicalId\":190601,\"journal\":{\"name\":\"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2018.8563446\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2018.8563446","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of GaN HEMT Class-E Power Amplifier for Satellite Communication
This paper proposed a design of micro-strip line class-E power amplifier based on GaN HEMT devices working at 2.2GHz. By means of part harmonics suppression and inductance effect enhancing in the drain bias circuit, ideal class-E voltage and current waveform at drain and high efficiency were achieved. The combining simulation results demonstrate 74.8% PAE, 15.1dB power gain and 41.16dBm output power with 26dBm input power.
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