{"title":"传统平面隧道场效应管、带口袋的平面隧道场效应管和L形隧道场效应管的单事件瞬态分析","authors":"R. Manohari, K. K. Nagarajan, R. Srinivasan","doi":"10.1109/ICNETS2.2017.8067923","DOIUrl":null,"url":null,"abstract":"The impact of technology scaling vividly increases the susceptibility of semiconductor devices to radiation. Single Event Transient (SET) in a device is a process in which the generation of charge takes place when a single particle passes through a sensitive node in the device. This paper deals with the performance analysis of three different tunneling structures such as the conventional planar Tunnel FET, Planar Tunnel FET with pocket and L shaped Tunnel FET (proposed to improve the ON current of conventional Tunnel FET) are scrutinized in terms of on current. Along with that the conventional planar Tunnel FET, Planar Tunnel FET with pocket and L shaped Tunnel FET are studied for their single event transient performance. 2D-TCAD simulations are used for this purpose.","PeriodicalId":413865,"journal":{"name":"2017 International Conference on Nextgen Electronic Technologies: Silicon to Software (ICNETS2)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Single event transient analyses of conventional planar tunnel FET, planar Tunnel FET with pocket and L shaped tunnel FET\",\"authors\":\"R. Manohari, K. K. Nagarajan, R. Srinivasan\",\"doi\":\"10.1109/ICNETS2.2017.8067923\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The impact of technology scaling vividly increases the susceptibility of semiconductor devices to radiation. Single Event Transient (SET) in a device is a process in which the generation of charge takes place when a single particle passes through a sensitive node in the device. This paper deals with the performance analysis of three different tunneling structures such as the conventional planar Tunnel FET, Planar Tunnel FET with pocket and L shaped Tunnel FET (proposed to improve the ON current of conventional Tunnel FET) are scrutinized in terms of on current. Along with that the conventional planar Tunnel FET, Planar Tunnel FET with pocket and L shaped Tunnel FET are studied for their single event transient performance. 2D-TCAD simulations are used for this purpose.\",\"PeriodicalId\":413865,\"journal\":{\"name\":\"2017 International Conference on Nextgen Electronic Technologies: Silicon to Software (ICNETS2)\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Nextgen Electronic Technologies: Silicon to Software (ICNETS2)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICNETS2.2017.8067923\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Nextgen Electronic Technologies: Silicon to Software (ICNETS2)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICNETS2.2017.8067923","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Single event transient analyses of conventional planar tunnel FET, planar Tunnel FET with pocket and L shaped tunnel FET
The impact of technology scaling vividly increases the susceptibility of semiconductor devices to radiation. Single Event Transient (SET) in a device is a process in which the generation of charge takes place when a single particle passes through a sensitive node in the device. This paper deals with the performance analysis of three different tunneling structures such as the conventional planar Tunnel FET, Planar Tunnel FET with pocket and L shaped Tunnel FET (proposed to improve the ON current of conventional Tunnel FET) are scrutinized in terms of on current. Along with that the conventional planar Tunnel FET, Planar Tunnel FET with pocket and L shaped Tunnel FET are studied for their single event transient performance. 2D-TCAD simulations are used for this purpose.
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