{"title":"低温反应溅射合成氮化镓","authors":"A. Jagoda, L. Dobrzański, B. Stańczyk","doi":"10.1109/WBL.2001.946557","DOIUrl":null,"url":null,"abstract":"Summary form only given. The authors report on the technology of GaN synthesis which is based on reactive ion sputtering from a Ga target in a nitrogen atmosphere. This process is carried out at room temperature and in low pressure conditions.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Synthesis of GaN by reactive sputtering at low temperature\",\"authors\":\"A. Jagoda, L. Dobrzański, B. Stańczyk\",\"doi\":\"10.1109/WBL.2001.946557\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. The authors report on the technology of GaN synthesis which is based on reactive ion sputtering from a Ga target in a nitrogen atmosphere. This process is carried out at room temperature and in low pressure conditions.\",\"PeriodicalId\":246239,\"journal\":{\"name\":\"Journal of Wide Bandgap Materials\",\"volume\":\"85 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Wide Bandgap Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WBL.2001.946557\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Wide Bandgap Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WBL.2001.946557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Synthesis of GaN by reactive sputtering at low temperature
Summary form only given. The authors report on the technology of GaN synthesis which is based on reactive ion sputtering from a Ga target in a nitrogen atmosphere. This process is carried out at room temperature and in low pressure conditions.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
