原位高掺杂砷多晶硅技术改善窄发射极双极晶体管性能

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting Pub Date : 1995-10-02 DOI:10.1109/BIPOL.1995.493874

K. Inou, Y. Katsumata, S. Matsuda, H. Naruse, H. Sugaya, H. Iwai

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摘要

为了改善窄发射极双极晶体管因插头效应而导致的电学特性退化问题，提出了原位高掺杂砷多晶硅发射极技术。实验证明，用新工艺制备的晶体管具有良好的电学特性。

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Improvement of narrow emitter bipolar transistor performance by in-situ highly doped arsenic polysilicon technique

An in-situ highly doped arsenic polysilicon emitter technology has been developed as a way to improve the degradation of electrical characteristics suffered by narrow emitter bipolar transistors due to the plug effect. We have experimentally confirmed that transistors fabricated with the new technique have good electrical characteristics.

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Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

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